Pixel scaling technology in CMOS image sensors with a lateral overflow integration capacitor

Shin Sakai, Yoshiaki Tashiro, Shun Kawada, Shigetoshi Sugawa

Research output: Contribution to journalArticle

Abstract

The relationship between the resolution and pixel pitch considering the optical diffraction principally caused by the lens circle aperture is discussed for the image sensor required to secure a high SNR and full well capacity for each pixel. The light diffraction of some high luminance patterns was calculated. We discuss the results for the optimization methodology of pixel pitch scaling considering the influence of the light diffraction. The performance of a CMOS image sensor with shared and small pixels and lateral overflow integration capacitor was developed based on our results. A CMOS image sensor consisting of 1/3.3 inch optical format, 3-/μm pixel pitch and 1280 (H) × 960 (V) pixels was fabricated Using a 0.18- μ m 2P3M CMOS technology with a buried pinned photodiode process. The sensor achieved 84 μV/e- photo-electric conversion gain, 6.9×10 4e- full well capacity and 90 dB dynamic range in one exposure.

Original languageEnglish
Pages (from-to)1944-1950
Number of pages7
JournalKyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers
Volume64
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

ASJC Scopus subject areas

  • Media Technology
  • Computer Science Applications
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Pixel scaling technology in CMOS image sensors with a lateral overflow integration capacitor'. Together they form a unique fingerprint.

  • Cite this