Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy

Hirokazu Fukidome, Kousuke Nagashio, Naoka Nagamura, Keiichiro Tashima, Kazutoshi Funakubo, Koji Horiba, Maki Suemitsu, Akira Toriumi, Masaharu Oshima

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Graphene is a promising material for next-generation devices owing to its excellent electronic properties. Graphene devices do not, however, exhibit the high performance that is expected considering graphene's intrinsic electronic properties. Operando, i.e., gate-controlled, photoelectron nanospectroscopy is needed to observe electronic states in device operation conditions. We have achieved, for the first time, pinpoint operando core-level photoelectron nanospectroscopy of a channel of a graphene transistor. The direct relationship between the graphene's binding energy and the Fermi level is reproduced by a simulation assuming linear band dispersion. This operando nanospectroscopy will bridge the gap between electronic properties and device performance.

Original languageEnglish
Article number065101
JournalApplied Physics Express
Volume7
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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