Piezoresistive strain sensor based on monolayer molybdenum disulfide continuous film deposited by chemical vapor deposition

Minjie Zhu, Kei Sakamoto, Jinhua Li, Naoki Inomata, Masaya Toda, Takahito Ono

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this paper, a centimeter-scale monolayer molybdenum disulfide (MoS2) film deposition method has been developed through a simple low-pressure chemical vapor deposition (LPCVD) growth system. The growth pressure dependence on film quality is investigated in this LPCVD system. The layer nature, electrical characteristic of the as-grown MoS2 films indicate that high quality films have been achieved. In addition, a hydrofluoric acid treated SiO2/Si substrate is used to improve the quality of the MoS2 films. Piezoresistive strain sensor based on the monolayer MoS2 film elements is fabricated by directly patterning metal contact pads on MoS2 films through a silicon stencil mask. A gauge factor of 104 - 26 under compressive strain is obtained by using a four-point bending method, which may inspire new possibilities for two-dimensional (2D) material-based microsystems and electronics.

Original languageEnglish
Article number055002
JournalJournal of Micromechanics and Microengineering
Volume29
Issue number5
DOIs
Publication statusPublished - 2019 Mar 15

Keywords

  • LPCVD
  • gauge factor
  • growth pressure
  • monolayer MoS films
  • strain sensor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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