Piezoresistive property of an aluminum-doped zinc oxide thin film deposited via atomic-layer deposition for microelectromechanical system/nanoelectromenchanical system applications

Naoki Inomata; Nguyen Van Toan; Takahito Ono

doi:10.1002/tee.22570

Piezoresistive property of an aluminum-doped zinc oxide thin film deposited via atomic-layer deposition for microelectromechanical system/nanoelectromenchanical system applications

Naoki Inomata, Nguyen Van Toan, Takahito Ono

ENG - Mechanical Systems Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The piezoresistive property of an aluminum (Al)-doped zinc oxide (AZO) thin film (thickness = 20 nm) is evaluated using a microfabricated silicon cantilever structure. The AZO thin film is deposited via atomic-layer deposition with 5% Al doping. An AZO piezoresistor is patterned at the root of the cantilever. This cantilever device is fabricated using conventional microfabrication techniques such as lithography, lift-off, ion milling, and dry/wet etching. The cantilever is deflected by pressing the tip of the cantilever by a needle mounted on a micromanipulator. The strain of the AZO pattern caused by the deflection is numerically calculated using a finite element method based on the dimensions and materials of the fabricated device. The output current of the AZO changes almost linearly with increase in the input voltage. The gauge factor of the AZO thin-film piezoresistor is found to be 8.5.

Original language	English
Pages (from-to)	S120-S124
Journal	IEEJ Transactions on Electrical and Electronic Engineering
Volume	12
DOIs	https://doi.org/10.1002/tee.22570
Publication status	Published - 2017 Dec

Keywords

atomic-layer deposition
microelectromechanical systems/nanoelectromechanical systems
piezoresistance
zinc oxide

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1002/tee.22570

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Piezoresistive property of an aluminum-doped zinc oxide thin film deposited via atomic-layer deposition for microelectromechanical system/nanoelectromenchanical system applications. / Inomata, Naoki ; Van Toan, Nguyen ; Ono, Takahito.

In: IEEJ Transactions on Electrical and Electronic Engineering, Vol. 12, 12.2017, p. S120-S124.

Research output: Contribution to journal › Article › peer-review

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title = "Piezoresistive property of an aluminum-doped zinc oxide thin film deposited via atomic-layer deposition for microelectromechanical system/nanoelectromenchanical system applications",

abstract = "The piezoresistive property of an aluminum (Al)-doped zinc oxide (AZO) thin film (thickness = 20 nm) is evaluated using a microfabricated silicon cantilever structure. The AZO thin film is deposited via atomic-layer deposition with 5% Al doping. An AZO piezoresistor is patterned at the root of the cantilever. This cantilever device is fabricated using conventional microfabrication techniques such as lithography, lift-off, ion milling, and dry/wet etching. The cantilever is deflected by pressing the tip of the cantilever by a needle mounted on a micromanipulator. The strain of the AZO pattern caused by the deflection is numerically calculated using a finite element method based on the dimensions and materials of the fabricated device. The output current of the AZO changes almost linearly with increase in the input voltage. The gauge factor of the AZO thin-film piezoresistor is found to be 8.5.",

keywords = "atomic-layer deposition, microelectromechanical systems/nanoelectromechanical systems, piezoresistance, zinc oxide",

author = "Naoki Inomata and {Van Toan}, Nguyen and Takahito Ono",

note = "Funding Information: Part of this research was performed at the Micro/Nanomachining Research Education Center and the Nishizawa Center of Tohoku University. This work was supported in part by JSPS KAKENHI (Grant No. 17H04804). Publisher Copyright: {\textcopyright} 2017 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2017",

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doi = "10.1002/tee.22570",

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N1 - Funding Information: Part of this research was performed at the Micro/Nanomachining Research Education Center and the Nishizawa Center of Tohoku University. This work was supported in part by JSPS KAKENHI (Grant No. 17H04804). Publisher Copyright: © 2017 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017/12

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N2 - The piezoresistive property of an aluminum (Al)-doped zinc oxide (AZO) thin film (thickness = 20 nm) is evaluated using a microfabricated silicon cantilever structure. The AZO thin film is deposited via atomic-layer deposition with 5% Al doping. An AZO piezoresistor is patterned at the root of the cantilever. This cantilever device is fabricated using conventional microfabrication techniques such as lithography, lift-off, ion milling, and dry/wet etching. The cantilever is deflected by pressing the tip of the cantilever by a needle mounted on a micromanipulator. The strain of the AZO pattern caused by the deflection is numerically calculated using a finite element method based on the dimensions and materials of the fabricated device. The output current of the AZO changes almost linearly with increase in the input voltage. The gauge factor of the AZO thin-film piezoresistor is found to be 8.5.

AB - The piezoresistive property of an aluminum (Al)-doped zinc oxide (AZO) thin film (thickness = 20 nm) is evaluated using a microfabricated silicon cantilever structure. The AZO thin film is deposited via atomic-layer deposition with 5% Al doping. An AZO piezoresistor is patterned at the root of the cantilever. This cantilever device is fabricated using conventional microfabrication techniques such as lithography, lift-off, ion milling, and dry/wet etching. The cantilever is deflected by pressing the tip of the cantilever by a needle mounted on a micromanipulator. The strain of the AZO pattern caused by the deflection is numerically calculated using a finite element method based on the dimensions and materials of the fabricated device. The output current of the AZO changes almost linearly with increase in the input voltage. The gauge factor of the AZO thin-film piezoresistor is found to be 8.5.

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KW - microelectromechanical systems/nanoelectromechanical systems

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Piezoresistive property of an aluminum-doped zinc oxide thin film deposited via atomic-layer deposition for microelectromechanical system/nanoelectromenchanical system applications

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ASJC Scopus subject areas

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