Piezoresistive cantilevers using InAs-based 2D heterostructures

H. Yamaguchi, S. Miyashita, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

We measured the magneto-piezoresistance of micromechanical cantilevers fabricated from two-dimensional InAs/AlGaSb heterostructures. The magneto-piezoresistance showed the features of conductance fluctuation and Schbnikov-de Haas oscillation, depending on the sample electron mobility, indicating strong quantum effects on the piezoresistance. A possible mechanism for these quantum effects is discussed based on the comparison between the magneto-piezoresistance and differential magnetoresistance curves.

Original languageEnglish
Pages (from-to)70-73
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume24
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Aug
Externally publishedYes
EventProceedings of the Intenational Symposium on Functional - Atsugi/Kanagawa, Japan
Duration: 2003 Nov 122003 Nov 14

Keywords

  • GaAs (1 1 1)A
  • InAs
  • MEMS
  • NEMS
  • Q1D

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Piezoresistive cantilevers using InAs-based 2D heterostructures'. Together they form a unique fingerprint.

Cite this