Piezoelectric Tantalum Aluminum Nitride Films for Vibrational Micro Energy Harvesters

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the first attempt to apply highly piezoelectric Ta-doped AlN thin films for vibration-driven micro energy harvesters. TaAl1-xN (x = 0.068) films were grown on Pt/Ti/Si substrates and applied to microfabricate energy harvesters. The Ta-AlN films exhibit a highly c-axis crystal orientation and good electrical properties with low leakage current density of 0.2×10 A/cm and low loss tangent of 0.02. Our prototype of the Ta-AlN based micro energy harvesters shows the normalized power density (NPD) of 13.7 mW.g.cm. This result was an approximately 6-fold increase compared to the best of the published pure AlN harvesters and outperformed the PZT-based ones. Also, our first attempt is approaching to the best-published performance of the higher co-dopant concentration (MgHf)0.11Al0.89N and Sc0.43Al0.57N.

Original languageEnglish
Title of host publication34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages242-245
Number of pages4
ISBN (Electronic)9781665419123
DOIs
Publication statusPublished - 2021 Jan 25
Event34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021 - Virtual, Gainesville, United States
Duration: 2021 Jan 252021 Jan 29

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume2021-January
ISSN (Print)1084-6999

Conference

Conference34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
Country/TerritoryUnited States
CityVirtual, Gainesville
Period21/1/2521/1/29

Keywords

  • Doped AlN film
  • MEMS
  • piezoelectric generators
  • vibrational micro-energy harvesters

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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