The formation of ZnO piezoelectric films has been attempted using the electron cyclotron resonance (ECR) sputtering system. It has been confirmed that this system is capable of depositing a ZnO piezoelectric film with a specific resistance of 1010 to 1011 ohms-cm and c-axis orientation with a standard deviation of δ = 0.19 degrees on an IDT (comb-shaped electrode)/glass substrate at a low temperature (no substrate heating ≈ 200°C) and low gas pressure (≈10- torr).
|Number of pages||9|
|Journal||Electronics and Communications in Japan, Part III: Fundamental Electronic Science (English translation of Denshi Tsushin Gakkai Ronbunshi)|
|Publication status||Published - 1993 Nov 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering