Abstract
The formation of ZnO piezoelectric films has been attempted using the electron cyclotron resonance (ECR) sputtering system. It has been confirmed that this system is capable of depositing a ZnO piezoelectric film with a specific resistance of 1010 to 1011 ohms-cm and c-axis orientation with a standard deviation of δ = 0.19 degrees on an IDT (comb-shaped electrode)/glass substrate at a low temperature (no substrate heating ≈ 200°C) and low gas pressure (≈10- torr).
Original language | English |
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Pages (from-to) | 1-9 |
Number of pages | 9 |
Journal | Electronics and Communications in Japan, Part III: Fundamental Electronic Science (English translation of Denshi Tsushin Gakkai Ronbunshi) |
Volume | 76 |
Issue number | 11 |
Publication status | Published - 1993 Nov 1 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering