Piezoelectric properties of ZnO films deposited by an ECR sputtering System

Michio Kadota, Toru Kasanami, Makoto Minakata

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The formation of ZnO piezoelectric films has been attempted using the electron cyclotron resonance (ECR) sputtering system. It has been confirmed that this system is capable of depositing a ZnO piezoelectric film with a specific resistance of 1010 to 1011 ohms-cm and c-axis orientation with a standard deviation of δ = 0.19 degrees on an IDT (comb-shaped electrode)/glass substrate at a low temperature (no substrate heating ≈ 200°C) and low gas pressure (≈10- torr).

Original languageEnglish
Pages (from-to)1-9
Number of pages9
JournalElectronics and Communications in Japan, Part III: Fundamental Electronic Science (English translation of Denshi Tsushin Gakkai Ronbunshi)
Issue number11
Publication statusPublished - 1993 Nov 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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