Piezoelectric properties of ZnO films deposited by an ECR sputtering System

Michio Kadota, Toru Kasanami, Makoto Minakata

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1 Citation (Scopus)

Abstract

The formation of ZnO piezoelectric films has been attempted using the electron cyclotron resonance (ECR) sputtering system. It has been confirmed that this system is capable of depositing a ZnO piezoelectric film with a specific resistance of 1010 to 1011 ohms-cm and c-axis orientation with a standard deviation of δ = 0.19 degrees on an IDT (comb-shaped electrode)/glass substrate at a low temperature (no substrate heating ≈ 200°C) and low gas pressure (≈10- torr).

Original languageEnglish
Pages (from-to)1-9
Number of pages9
JournalElectronics and Communications in Japan, Part III: Fundamental Electronic Science (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume76
Issue number11
Publication statusPublished - 1993 Nov 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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