Piezoelectric photothermal and photoreflectance spectra of In xGa1-xN grown by radio-frequency molecular beam epitaxy

Eiki Kawano, Yuki Uchibori, Takashi Shimohara, Hironori Komaki, Ryuji Katayama, Kentaro Onabel, Atsuhiko Fukuyama, Tetsuo Ikarl

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Piezoelectric photothermal spectroscopy (PPTS) measurements were carried out on In^Ga^N (x = 0.01-0.32) thin films grown by radio-frequency molecular beam epitaxy. We found that the band energy shifts to the lower energy side of the spectrum (red shift) with an increase in the indium composition from 0.01 to 0.32. For samples with a lower indium composition, we were able to observe the exciton contribution, and the binding energy was estimated to be 27 meV (x = 0.01). Since conventional photoreflectance (PR) spectroscopy was unable to observe signals for the samples with a higher indium content (x = 0.13, 0.2, and 0.32), the usefulness of this PPTS method for samples with phase fluctuation is demonstrated.

Original languageEnglish
Pages (from-to)4601-4603
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 B
DOIs
Publication statusPublished - 2006 May 25

Keywords

  • Band gap
  • Exciton
  • InGaN
  • Photoreflectance
  • Piezoelectric photothermal spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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