Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film

L. V. Minh, Motoaki Hara, H. Kuwano, T. Yokoyama, T. Nishihara, M. Ueda

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g-2.cm-3. This achievement was 1.5-fold increase compared to state of the art.

Original languageEnglish
Article number7051154
Pages (from-to)1094-1097
Number of pages4
JournalProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume2015-February
Issue numberFebruary
DOIs
Publication statusPublished - 2015 Feb 26
Event2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 - Estoril, Portugal
Duration: 2015 Jan 182015 Jan 22

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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