Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film

L. V. Minh, M. Hara, H. Kuwano, T. Yokoyama, T. Nishihara, M. Ueda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g-2.cm-3. This achievement was 1.5-fold increase compared to state of the art.

Original languageEnglish
Title of host publication2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1094-1097
Number of pages4
EditionFebruary
ISBN (Electronic)9781479979554
DOIs
Publication statusPublished - 2015 Feb 26
Event2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 - Estoril, Portugal
Duration: 2015 Jan 182015 Jan 22

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
NumberFebruary
Volume2015-February
ISSN (Print)1084-6999

Other

Other2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015
Country/TerritoryPortugal
CityEstoril
Period15/1/1815/1/22

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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