Piezoelectric activity in c-axis oriented LiNbO₃/ZnO bilayers grown by laser ablation technique

LiNbO₃/ZnO multi-layer with a preferred c-axis orientation has been grown on glass and SiO₂/Si substrates by laser ablation technique. The piezoelectric activity in as deposited films is demonstrated using a novel approach to the atomic force microscope. In the presence of an in plane low frequency (0.1 to 5 Hz) ac electric field, we monitor and image the induced piezoelectric response normal to the film plane between two electrodes.