Piezoelectric activity in c-axis oriented LiNbO3/ZnO bilayers grown by laser ablation technique

Parmanand Sharma, K. Sreenivas, L. M. Belova, K. V. Rao

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

LiNbO3/ZnO multi-layer with a preferred c-axis orientation has been grown on glass and SiO2/Si substrates by laser ablation technique. The piezoelectric activity in as deposited films is demonstrated using a novel approach to the atomic force microscope. In the presence of an in plane low frequency (0.1 to 5 Hz) ac electric field, we monitor and image the induced piezoelectric response normal to the film plane between two electrodes.

Original languageEnglish
Pages (from-to)65-68
Number of pages4
JournalFerroelectrics
Volume329
DOIs
Publication statusPublished - 2005
Externally publishedYes

Keywords

  • Laser ablation
  • Piezoelectricity
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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