Physics of nano-contact between Si quantum dots and inversion layer

Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Physics of nano-contact in metal-oxide-semiconductor field-effect transistors has been attracting interests of many researchers recently. Contacts are conventionally treated as a reservoir in thermal equilibrium, but behavior of contacts in ultra-small devices is still open questions. In this paper, we investigate electron tunneling between a two-dimensional electron gas (2DEG) and Si quantum dots (QDs) using Si-QDs floating gate metal-oxide-semiconductor (MOS) capacitor samples and found unexpected temperature dependence. This unusual tunneling behavior was phenomenologically explained by considering the wave functions of the 2DEG explicitly. The observed temperature dependence of tunneling currents is originated from the non-thermal-equilibrium nature of the 2DEG electrode.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
Pages463-469
Number of pages7
Edition7
DOIs
Publication statusPublished - 2009 Dec 1
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number7
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Sakurai, Y., Nomura, S., Takada, Y., Iwata, J., Shiraishi, K., Muraguchi, M., Endoh, T., Shigeta, Y., Ikeda, M., Makihara, K., & Miyazaki, S. (2009). Physics of nano-contact between Si quantum dots and inversion layer. In ECS Transactions - ULSI Process Integration 6 (7 ed., pp. 463-469). (ECS Transactions; Vol. 25, No. 7). https://doi.org/10.1149/1.3203984