Physics of metal/high-k interfaces

Takashi Nakayama, Kenji Shiraishi, Seiichi Miyazaki, Yasushi Akasaka, Takashi Nakaoka, Kazuyoshi Torii, Akio Ohta, Parhat Ahmet, Kenji Ohmori, Naoto Umezawa, Heiji Watanabe, Toyohiro Chikyow, Yasuo Nara, Hiroshi Iwai, Keisaku Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

The conventional theory of work functions (Schottky barriers) does not work at pure-metal/high-k-dielectrics interfaces. This occurs due to the selective interface atom bonding reflecting the large ionicity of high-k materials and the characteristic density of p-metal electronic states. Taking into accounts these features, we have constructed a new theory of work functions based on a concept of generalized charge neutrality levels. This theory systematically explains work functions of various gate materials on high-k dielectrics, in particular the unusual behavior of p-metal work functions, and naturally reproduces band offsets at various semiconductor/semiconductor interfaces. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Gate Dielectrics 4
PublisherElectrochemical Society Inc.
Pages129-140
Number of pages12
Edition3
ISBN (Electronic)1566775035
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number3
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06/10/2906/11/3

ASJC Scopus subject areas

  • Engineering(all)

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