The conventional theory of work functions (Schottky barriers) does not work at pure-metal/high-k-dielectrics interfaces. This occurs due to the selective interface atom bonding reflecting the large ionicity of high-k materials and the characteristic density of p-metal electronic states. Taking into accounts these features, we have constructed a new theory of work functions based on a concept of generalized charge neutrality levels. This theory systematically explains work functions of various gate materials on high-k dielectrics, in particular the unusual behavior of p-metal work functions, and naturally reproduces band offsets at various semiconductor/semiconductor interfaces. copyright The Electrochemical Society.
|Number of pages||12|
|Publication status||Published - 2006|
|Event||Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 2006 Oct 29 → 2006 Nov 3
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