We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2004 Oct 1|
|Event||2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States|
Duration: 2004 Jun 15 → 2004 Jun 17
ASJC Scopus subject areas
- Electrical and Electronic Engineering