Physics in designing desirable ReRAM stack structure - Atomistic recipes based on oxygen chemical potential control and charge injection/removal

K. Kamiya, M. Y. Yang, B. Magyari-Kope, M. Niwa, Y. Nishi, K. Shiraishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

We clarify the importance of three-layers ReRAM stack-structures and provide guidelines for further optimization by both charge injection/removal and oxygen chemical potential. We determine atomistic structures corresponding to the ON-OFF switching process of ReRAMs using ab initio calculations. The cohesion-isolation of oxygen vacancies is found to be a strong driving force in the ON-OFF switching observed in oxide-based ReRAMs, and this phase transition can be controlled by injecting/removing charges while altering the oxygen chemical potential. Based on this concept, we propose universal guidelines for designing desirable ReRAM stack structures by introducing an oxygen vacancy barrier layer.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs
Publication statusPublished - 2012 Dec 1
Externally publishedYes
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 2012 Dec 102012 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/TerritoryUnited States
CitySan Francisco, CA
Period12/12/1012/12/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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