Physico-chemical features of the acid ammonothermal growth of GaN

Dirk Ehrentraut, Yuji Kagamitani, Chiaki Yokoyama, Tsuguo Fukuda

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

Growth of GaN crystals by the ammonothermal route is both challenging and promising. We discuss the impact of the chemical environment on the nucleation of GaN through the acidic ammonothermal route at temperatures ≤550 °C. The solubility of GaN in supercritical ammonia containing the acidic mineralizer ammonium chloride (NH4Cl) is investigated. Low-temperature photoluminescence shows that improved supersaturation yields ammonothermal GaN with high-optical quality comparable to hydride vapor-phase epitaxy (HVPE)-grown GaN.

Original languageEnglish
Pages (from-to)891-895
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number5
DOIs
Publication statusPublished - 2008 Mar 1

Keywords

  • A1.Solubility
  • A2.Growth from solution
  • B1.Gallium compounds
  • B1.Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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