Physico-chemical features of the acid ammonothermal growth of GaN

Dirk Ehrentraut; Yuji Kagamitani; Chiaki Yokoyama; Tsuguo Fukuda

doi:10.1016/j.jcrysgro.2007.11.090

Physico-chemical features of the acid ammonothermal growth of GaN

Dirk Ehrentraut, Yuji Kagamitani, Chiaki Yokoyama, Tsuguo Fukuda

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Growth of GaN crystals by the ammonothermal route is both challenging and promising. We discuss the impact of the chemical environment on the nucleation of GaN through the acidic ammonothermal route at temperatures ≤550 °C. The solubility of GaN in supercritical ammonia containing the acidic mineralizer ammonium chloride (NH₄Cl) is investigated. Low-temperature photoluminescence shows that improved supersaturation yields ammonothermal GaN with high-optical quality comparable to hydride vapor-phase epitaxy (HVPE)-grown GaN.

Original language	English
Pages (from-to)	891-895
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	5
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.11.090
Publication status	Published - 2008 Mar 1

Keywords

A1.Solubility
A2.Growth from solution
B1.Gallium compounds
B1.Nitrides

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{cd0534c4f6d240f888782572215bf94f,

title = "Physico-chemical features of the acid ammonothermal growth of GaN",

abstract = "Growth of GaN crystals by the ammonothermal route is both challenging and promising. We discuss the impact of the chemical environment on the nucleation of GaN through the acidic ammonothermal route at temperatures ≤550 °C. The solubility of GaN in supercritical ammonia containing the acidic mineralizer ammonium chloride (NH4Cl) is investigated. Low-temperature photoluminescence shows that improved supersaturation yields ammonothermal GaN with high-optical quality comparable to hydride vapor-phase epitaxy (HVPE)-grown GaN.",

keywords = "A1.Solubility, A2.Growth from solution, B1.Gallium compounds, B1.Nitrides",

author = "Dirk Ehrentraut and Yuji Kagamitani and Chiaki Yokoyama and Tsuguo Fukuda",

year = "2008",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2007.11.090",

language = "English",

volume = "310",

pages = "891--895",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Physico-chemical features of the acid ammonothermal growth of GaN

AU - Ehrentraut, Dirk

AU - Kagamitani, Yuji

AU - Yokoyama, Chiaki

AU - Fukuda, Tsuguo

PY - 2008/3/1

Y1 - 2008/3/1

N2 - Growth of GaN crystals by the ammonothermal route is both challenging and promising. We discuss the impact of the chemical environment on the nucleation of GaN through the acidic ammonothermal route at temperatures ≤550 °C. The solubility of GaN in supercritical ammonia containing the acidic mineralizer ammonium chloride (NH4Cl) is investigated. Low-temperature photoluminescence shows that improved supersaturation yields ammonothermal GaN with high-optical quality comparable to hydride vapor-phase epitaxy (HVPE)-grown GaN.

AB - Growth of GaN crystals by the ammonothermal route is both challenging and promising. We discuss the impact of the chemical environment on the nucleation of GaN through the acidic ammonothermal route at temperatures ≤550 °C. The solubility of GaN in supercritical ammonia containing the acidic mineralizer ammonium chloride (NH4Cl) is investigated. Low-temperature photoluminescence shows that improved supersaturation yields ammonothermal GaN with high-optical quality comparable to hydride vapor-phase epitaxy (HVPE)-grown GaN.

KW - A1.Solubility

KW - A2.Growth from solution

KW - B1.Gallium compounds

KW - B1.Nitrides

UR - http://www.scopus.com/inward/record.url?scp=39249083901&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39249083901&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.11.090

DO - 10.1016/j.jcrysgro.2007.11.090

M3 - Article

AN - SCOPUS:39249083901

VL - 310

SP - 891

EP - 895

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 5

ER -