TY - JOUR
T1 - Physico-chemical features of the acid ammonothermal growth of GaN
AU - Ehrentraut, Dirk
AU - Kagamitani, Yuji
AU - Yokoyama, Chiaki
AU - Fukuda, Tsuguo
N1 - Funding Information:
Funding through the Japan Society for the Promotion of Science is gratefully acknowledged. We are thankful to Katsushi Fujii (Tohoku University) for PL measurements.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/3/1
Y1 - 2008/3/1
N2 - Growth of GaN crystals by the ammonothermal route is both challenging and promising. We discuss the impact of the chemical environment on the nucleation of GaN through the acidic ammonothermal route at temperatures ≤550 °C. The solubility of GaN in supercritical ammonia containing the acidic mineralizer ammonium chloride (NH4Cl) is investigated. Low-temperature photoluminescence shows that improved supersaturation yields ammonothermal GaN with high-optical quality comparable to hydride vapor-phase epitaxy (HVPE)-grown GaN.
AB - Growth of GaN crystals by the ammonothermal route is both challenging and promising. We discuss the impact of the chemical environment on the nucleation of GaN through the acidic ammonothermal route at temperatures ≤550 °C. The solubility of GaN in supercritical ammonia containing the acidic mineralizer ammonium chloride (NH4Cl) is investigated. Low-temperature photoluminescence shows that improved supersaturation yields ammonothermal GaN with high-optical quality comparable to hydride vapor-phase epitaxy (HVPE)-grown GaN.
KW - A1.Solubility
KW - A2.Growth from solution
KW - B1.Gallium compounds
KW - B1.Nitrides
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U2 - 10.1016/j.jcrysgro.2007.11.090
DO - 10.1016/j.jcrysgro.2007.11.090
M3 - Article
AN - SCOPUS:39249083901
VL - 310
SP - 891
EP - 895
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 5
ER -