Physical origins of ON-OFF switching in ReRAM via VO based conducting channels

Katsumasa Kamiya, Moon Young Yang, Seong Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, Kenji Shiraishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We study the ON-OFF switching mechanism of ReRAM via oxygen vacancy (V O) based conducting channels using first-principles calculations. We find cohesion-dispersion transition of VO upon carrier injection and removal is a strong driving force in the ON-OFF switching in binary-oxide-based ReRAMs. The physical origins of the transition is the formation of bonding-like hybridized orbitals of VO defect levels, whose occupation can be controlled by changing system Fermi level by applying a voltage.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages11-12
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 2012 Jul 292012 Aug 3

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period12/7/2912/8/3

Keywords

  • density functional theory
  • resistive-random-access-memories

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Physical origins of ON-OFF switching in ReRAM via V<sub>O</sub> based conducting channels'. Together they form a unique fingerprint.

Cite this