Physical model of BTI, TDDB and SILC in HfO2-based high-k gate dielectrics

K. Torii, K. Shiraishi, S. Miyazaki, K. Yamabe, M. Boero, T. Chikyow, K. Yamada, H. Kitajima, T. Arikado

Research output: Contribution to journalConference article

80 Citations (Scopus)

Abstract

The microscopic mechanism of the degradation occurring in HfO 2-based high-k/IL dual layer gate insulator has been investigated. The hole-injection-induced release of hydrogen from Si-H terminations causes IL-breakdown. This mechanism accelerates NBTI. Defects due to electron-trapped oxygen vacancies are the origin of trap-assisted tunneling, causing SILC in the electron current and PBTI.

Original languageEnglish
Pages (from-to)129-132
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Torii, K., Shiraishi, K., Miyazaki, S., Yamabe, K., Boero, M., Chikyow, T., Yamada, K., Kitajima, H., & Arikado, T. (2004). Physical model of BTI, TDDB and SILC in HfO2-based high-k gate dielectrics. Technical Digest - International Electron Devices Meeting, IEDM, 129-132.