Physical mechanisms of photoluminescence of InGaAs(N) alloy films grown by MOVPE

Engineering

• Alloy 30%
• Radiative Recombination 20%
• Temperature Dependence 10%
• Room Temperature 10%
• Wavelength 10%
• Low-Temperature 10%
• Energy Gap 10%
• Emission Peak 10%
• Band Edge 10%
• Recombination Centre 10%
• Localized State 10%
• Energy Difference 10%
• Temperature 10%
• Mechanisms 10%
• High Energy 10%
• Lower Energy 10%
• Recombination 10%
• Localization Energy 10%

Physics

• Photoluminescence 40%
• Alloy 30%
• Metalorganic Vapor Phase Epitaxy 20%
• Temperature Dependence 10%
• Room Temperature 10%
• Exciton 10%
• Recombination 10%
• Temperature 10%
• Emission 10%
• Value 10%
• Increasing 10%
• Spectra 10%

Material Science

• Indium Gallium Arsenide 100%
• Liquid Films 30%