Physical mechanisms of photoluminescence of InGaAs(N) alloy films grown by MOVPE

Sakuntam Sanorpim, F. Nakajima, S. Imura, R. Katayama, J. Wu, K. Onabe, Y. Shiraki

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4 Citations (Scopus)


Reported here are some results of temperature and excitation power dependences of photoluminescence (PL) from the InGaAs(N) (In = 10.5%, 17.0% and N = 0-2.3%) alloy films grown at 530 °C and 600 °C by metalorganic vapour phase epitaxy (MOVPE). The InGaAs(N) alloy films emitting at room temperature in the wavelength (λ) range of 0.97-1.23 μm have been investigated. The low-temperature PL spectra in this set of samples are dominated by multiple peak emissions associated with both near-band-edge emission of InGaAs(N) (high energy peak, EPH) and strongly localized states (lower energy peaks, EPL) much lower than the InGaAs(N) band-gap. The temperature dependence of integrated PL intensity indicates the presence of non-radiative recombination centers with the localization energy (Eloc = 9.4-25.8 meV), which increased with increasing N concentration. Here we noted that Eloc are in agreement with the energy difference of EPH and EPL peaks. The α values extracted from the relation IPL ∝ Iexα are used to examine the recombination process. In the N-containing layers it is demonstrated that free-excitons, not free-carriers, mainly govern the radiative recombination.

Original languageEnglish
Pages (from-to)782-786
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Issue number3
Publication statusPublished - 2002 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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