Abstract
The physical and electrical properties of Ni silicides, reactively formed by a thin Ni layer of 3 nm, have been investigated. The existence of NiSi 2 phase has been confirmed at low temperature annealing by x-ray photoelectron spectroscopy. The silicides have shown flat surfaces up to an annealing temperature of 800 °C and a stable sheet resistance can be achieved. The Schottky barrier heights extracted from diode characteristics have shown stable values against annealing temperature owing to the stability of the film with an ideality factor nearly to unit.
| Original language | English |
|---|---|
| Article number | 012015 |
| Journal | Journal of Physics: Conference Series |
| Volume | 417 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 |
| Externally published | Yes |
| Event | 15th International Conference on Thin Films, ICTF 2011 - Kyoto, Japan Duration: 2011 Nov 8 → 2011 Nov 11 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Tamura, Y., Yoshihara, R., Kakushima, K., Nohira, H., Nakatsuka, O., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2013). Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100). Journal of Physics: Conference Series, 417(1), [012015]. https://doi.org/10.1088/1742-6596/417/1/012015