TY - JOUR
T1 - Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)
AU - Tamura, Y.
AU - Yoshihara, R.
AU - Kakushima, K.
AU - Nohira, H.
AU - Nakatsuka, O.
AU - Ahmet, P.
AU - Kataoka, Y.
AU - Nishiyama, A.
AU - Sugii, N.
AU - Tsutsui, K.
AU - Natori, K.
AU - Hattori, T.
AU - Iwai, H.
PY - 2013
Y1 - 2013
N2 - The physical and electrical properties of Ni silicides, reactively formed by a thin Ni layer of 3 nm, have been investigated. The existence of NiSi 2 phase has been confirmed at low temperature annealing by x-ray photoelectron spectroscopy. The silicides have shown flat surfaces up to an annealing temperature of 800 °C and a stable sheet resistance can be achieved. The Schottky barrier heights extracted from diode characteristics have shown stable values against annealing temperature owing to the stability of the film with an ideality factor nearly to unit.
AB - The physical and electrical properties of Ni silicides, reactively formed by a thin Ni layer of 3 nm, have been investigated. The existence of NiSi 2 phase has been confirmed at low temperature annealing by x-ray photoelectron spectroscopy. The silicides have shown flat surfaces up to an annealing temperature of 800 °C and a stable sheet resistance can be achieved. The Schottky barrier heights extracted from diode characteristics have shown stable values against annealing temperature owing to the stability of the film with an ideality factor nearly to unit.
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U2 - 10.1088/1742-6596/417/1/012015
DO - 10.1088/1742-6596/417/1/012015
M3 - Conference article
AN - SCOPUS:84875907989
VL - 417
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012015
T2 - 15th International Conference on Thin Films, ICTF 2011
Y2 - 8 November 2011 through 11 November 2011
ER -