Abstract
In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation. By exploiting the passivation layer of Al2O3, the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc) of 4.77 mA cm-2 is very close to the experimentally measured 4.75 mA cm-2, which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD's geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.
Original language | English |
---|---|
Article number | 485401 |
Journal | Nanotechnology |
Volume | 28 |
Issue number | 48 |
DOIs | |
Publication status | Published - 2017 Nov 6 |
Keywords
- Si/SiC
- electrical characteristic
- minibands
- physical characteristic
- quantum dot
- solar cells
- superlattice
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering