Photoswitching in azafullerene encapsulated single-walled carbon nanotube FET devices

Li Yongfeng; Toshiro Kaneko; Jing Kong; Rikizo Hatakeyama

doi:10.1021/ja810086g

Photoswitching in azafullerene encapsulated single-walled carbon nanotube FET devices

Li Yongfeng, Toshiro Kaneko, Jing Kong, Rikizo Hatakeyama

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The photoinduced electrical transport properties of C ₅₉N@SWNTs are investigated by assembling them into FET devices. Our findings demonstrate that azafullerene molecules inside SWNTs make nanotube FET devices very sensitive to UV light exposure by the decrease of source-drain current upon light exposure. The photoswitching effect is found to be dependent on wavelengths of light and becomes negligible when the wavelength is increased to 480 nm. The photoinduced electron transfer is proposed to take place inside C59N@SWNTs due to the specific electronic structure of C ₅₉N, the heteromolecule bonding of which is sensitive to light.

Original language	English
Pages (from-to)	3412-3413
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	131
Issue number	10
DOIs	https://doi.org/10.1021/ja810086g
Publication status	Published - 2009 Mar 18

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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AU - Kong, Jing

AU - Hatakeyama, Rikizo

PY - 2009/3/18

Y1 - 2009/3/18

N2 - The photoinduced electrical transport properties of C 59N@SWNTs are investigated by assembling them into FET devices. Our findings demonstrate that azafullerene molecules inside SWNTs make nanotube FET devices very sensitive to UV light exposure by the decrease of source-drain current upon light exposure. The photoswitching effect is found to be dependent on wavelengths of light and becomes negligible when the wavelength is increased to 480 nm. The photoinduced electron transfer is proposed to take place inside C59N@SWNTs due to the specific electronic structure of C 59N, the heteromolecule bonding of which is sensitive to light.

AB - The photoinduced electrical transport properties of C 59N@SWNTs are investigated by assembling them into FET devices. Our findings demonstrate that azafullerene molecules inside SWNTs make nanotube FET devices very sensitive to UV light exposure by the decrease of source-drain current upon light exposure. The photoswitching effect is found to be dependent on wavelengths of light and becomes negligible when the wavelength is increased to 480 nm. The photoinduced electron transfer is proposed to take place inside C59N@SWNTs due to the specific electronic structure of C 59N, the heteromolecule bonding of which is sensitive to light.

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Photoswitching in azafullerene encapsulated single-walled carbon nanotube FET devices

Abstract

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