Photostimulated luminescence properties of BaFBr:Eu under ion irradiation

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2 Citations (Scopus)

Abstract

The photostimulated luminescence (PSL) properties of the phosphor BaFBr:Eu after ion beam irradiation was analyzed; in particular, the PSL intensity dependent on ion fluence. The PSL intensity increased linearly with the ion fluence up to 1012 ions/cm2, and subsequently decreased gradually. The ion fluence dependence was observed to be similar among samples containing different F centers or different Eu concentrations. The fluence dependence was quantitatively analyzed based on a trapping model, in which competition between the trapping processes to storage centers and radiation defects is assumed; the model explained the experimental data quantitatively. The results indicate that radiation defects influence the PSL properties via the trapping of photostimulated electrons.

Original languageEnglish
Pages (from-to)113-116
Number of pages4
JournalRadiation Measurements
Volume71
DOIs
Publication statusPublished - 2014 Dec

Keywords

  • Color centers
  • Ion irradiation
  • Photostimulated luminescence
  • Radiation defects

ASJC Scopus subject areas

  • Radiation
  • Instrumentation

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