Photoresponsivity of ZnO Schottky barrier diodes

D. C. Oh, T. Suzuki, T. Hanada, T. Yao, H. Makino, H. J. Ko

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

We report on the photoresponsivity of ZnO Schottky barrier diodes grown on (0001) GaN Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. First, ZnO Schottky barrier diodes show a reverse saturation current of ∼ 10-8 A in the dark, and they present a large current buildup of ∼ 103 A under ultraviolet light illumination, with maintaining stable diode characteristics. Second, ZnO Schottky barrier diodes have a large bandwidth of 195 nm, where the short-wavelength cutoff and the long-wavelength cutoff are 195 and 390 nm, respectively. Third, ZnO Schottky barrier diodes have a time constant of 0.36 ms. Consequently, it is suggested that the ZnO Schottky barrier diodes are very promising for ultraviolet photodetector applications.

Original languageEnglish
Pages (from-to)1595-1598
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number3
DOIs
Publication statusPublished - 2006 May 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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