Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE

Pawinee Klangtakai, Sakuntam Sanorpim, Ryuji Katayama, Kentaro Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of TQWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages402-403
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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