Photoreflectance of Cu-based I-III-VI2 heteroepitaxial layers grown by metalorganic chemical vapor deposition

Sho Shirakata, Shigefusa Chichibu

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


Photoreflectance (PR) spectroscopy has been developed as a powerful technique for the characterization of the heteroepitaxial layer of the Cu-III-VI2 semiconductors having the chalcopyrite structure. PR measurements have been carried out in the energy region near the fundamental absorption edge at 77 K for the heteroepitaxial layers of CuAlSe2, CuGaSe2, CuGaS2, and CuAlS2 grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition. Crystal quality, stress, and the crystallographic orientation have been well characterized, based on the analysis of the PR spectra in terms of transition energy, intensity, and broadening parameter.

Original languageEnglish
Pages (from-to)2043-2054
Number of pages12
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - 1996 Feb 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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