Photoreflectance characterization of cualse2hétéroépitaxial layers grown by metalorganic chemical vapor deposition

Sho Shirakata, Shigefusa Chichibu, Satoru Matsumoto, Shigehiro Isomura

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Photoreflectance (PR) has been developed as a useful technique for the characterization of chalcopyrite hétéroépitaxial layers. PR measurements at 77 K have been done on CuAlSe2 layers grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition technique. The analysis of the PR spectra in terms of transition energy, intensity and broadening parameter has led us to the successful characterization of the crystal quality, stress and the crystallographic orientation in the CuAlSe2 epitaxial layer.

Original languageEnglish
Pages (from-to)494-496
Number of pages3
JournalJapanese journal of applied physics
Issue numberS3
Publication statusPublished - 1993 Jan
Externally publishedYes


  • Chalcopyrite semiconductors
  • CuAISe
  • Heteroepitaxy
  • Metalorganic chemical vapor deposition
  • Modulation spectroscopy
  • Photoreflectance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Photoreflectance characterization of cualse<sub>2</sub>hétéroépitaxial layers grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this