Photopatterning of heterostructured polymer Langmuir-Blodgett films

Tiesheng Li, Masaya Mitsuishi, Tokuji Miyashita

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication.

Original languageEnglish
Pages (from-to)2115-2119
Number of pages5
JournalThin Solid Films
Volume516
Issue number8
DOIs
Publication statusPublished - 2008 Feb 29

Keywords

  • Copolymer
  • Heterostructure
  • Langmuir-Blodgett films
  • Photopatterning

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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