Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates

I. W. Feng; X. K. Cao; J. Li; J. Y. Lin; H. X. Jiang; N. Sawaki; Y. Honda; T. Tanikawa; J. M. Zavada

doi:10.1063/1.3556678

Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates

I. W. Feng, X. K. Cao, J. Li, J. Y. Lin, H. X. Jiang, N. Sawaki, Y. Honda, T. Tanikawa, J. M. Zavada

Materials Design Division

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Erbium doped InGaN alloys (InGaN:Er) were grown on Si (001) substrates using metal organic chemical vapor deposition. The growth of epitaxial films was accomplished by depositing InGaN:Er on GaN templates deposited on 7.3° off-oriented Si (001) substrates which were prepared by etching and subsequent selective area growth. X-ray diffraction measurements confirmed the formation of wurtzite InGaN (̄1101) epilayers, which exhibit strong photoluminescence emission at 1.54 μm. The observed emission intensity at 1.54 μm was comparable to that from similar alloys grown on GaN/AlN/ Al₂ O ₃ templates. These results indicate the high potential for on-chip integration of erbium based photonic devices with complementary metal oxide semiconductor technology.

Original language	English
Article number	081102
Journal	Applied Physics Letters
Volume	98
Issue number	8
DOIs	https://doi.org/10.1063/1.3556678
Publication status	Published - 2011 Feb 21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{cea0556b8b7e4c6d9fb4b0117824a66d,

title = "Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates",

abstract = "Erbium doped InGaN alloys (InGaN:Er) were grown on Si (001) substrates using metal organic chemical vapor deposition. The growth of epitaxial films was accomplished by depositing InGaN:Er on GaN templates deposited on 7.3° off-oriented Si (001) substrates which were prepared by etching and subsequent selective area growth. X-ray diffraction measurements confirmed the formation of wurtzite InGaN {\=(}1101) epilayers, which exhibit strong photoluminescence emission at 1.54 μm. The observed emission intensity at 1.54 μm was comparable to that from similar alloys grown on GaN/AlN/ Al2 O 3 templates. These results indicate the high potential for on-chip integration of erbium based photonic devices with complementary metal oxide semiconductor technology.",

author = "Feng, {I. W.} and Cao, {X. K.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.} and N. Sawaki and Y. Honda and T. Tanikawa and Zavada, {J. M.}",

note = "Funding Information: This work is funded by NSF (Grant No. ECCS-0854619). The authors would like to thank Dr. Tommy Wong of U.S. Army International Technology Center—Pacific for the coordination of this U.S./Japan collaboration. H.X.J. and J.Y.L. are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre Endowed chairs. J.M.Z. acknowledges support from NSF under the IR/D program. ",

year = "2011",

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doi = "10.1063/1.3556678",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates

AU - Feng, I. W.

AU - Cao, X. K.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Sawaki, N.

AU - Honda, Y.

AU - Tanikawa, T.

AU - Zavada, J. M.

N1 - Funding Information: This work is funded by NSF (Grant No. ECCS-0854619). The authors would like to thank Dr. Tommy Wong of U.S. Army International Technology Center—Pacific for the coordination of this U.S./Japan collaboration. H.X.J. and J.Y.L. are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre Endowed chairs. J.M.Z. acknowledges support from NSF under the IR/D program.

PY - 2011/2/21

Y1 - 2011/2/21

N2 - Erbium doped InGaN alloys (InGaN:Er) were grown on Si (001) substrates using metal organic chemical vapor deposition. The growth of epitaxial films was accomplished by depositing InGaN:Er on GaN templates deposited on 7.3° off-oriented Si (001) substrates which were prepared by etching and subsequent selective area growth. X-ray diffraction measurements confirmed the formation of wurtzite InGaN (̄1101) epilayers, which exhibit strong photoluminescence emission at 1.54 μm. The observed emission intensity at 1.54 μm was comparable to that from similar alloys grown on GaN/AlN/ Al2 O 3 templates. These results indicate the high potential for on-chip integration of erbium based photonic devices with complementary metal oxide semiconductor technology.

AB - Erbium doped InGaN alloys (InGaN:Er) were grown on Si (001) substrates using metal organic chemical vapor deposition. The growth of epitaxial films was accomplished by depositing InGaN:Er on GaN templates deposited on 7.3° off-oriented Si (001) substrates which were prepared by etching and subsequent selective area growth. X-ray diffraction measurements confirmed the formation of wurtzite InGaN (̄1101) epilayers, which exhibit strong photoluminescence emission at 1.54 μm. The observed emission intensity at 1.54 μm was comparable to that from similar alloys grown on GaN/AlN/ Al2 O 3 templates. These results indicate the high potential for on-chip integration of erbium based photonic devices with complementary metal oxide semiconductor technology.

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