Photon-stimulated desorption from chemically treated Si surfaces

Isao Ochiai, Taro Ogawa, Yuji Takakuwa, Kozo Mochiji

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Experimental results are presented on the synchrotron-radiation-induced desorption of oxygen ions from HF-treated Si surfaces measured with a quadrupole mass analyzer operated in the pulse-counting mode. The effect of atomic hydrogen exposure was studied. Desorption of H+, O+ and F+ ions was observed from HF-treated Si surfaces. The yield of O+ ions was increased more than 30-fold by exposure to atomic hydrogen.

Original languageEnglish
Pages (from-to)175-177
Number of pages3
JournalSurface Science
Volume287-288
Issue numberPART 1
DOIs
Publication statusPublished - 1993 May 10

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Photon-stimulated desorption from chemically treated Si surfaces'. Together they form a unique fingerprint.

  • Cite this