Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN is one of the promising candidates for the use in high-power electronic devices 1) operating at high frequencies, and normally-off GaN-based transistors on freestanding (FS) GaN substrates with low specific on-state resistances (~1.0 mΩ•cm 2) and high off-state breakdown voltage (>1.7 kV) have been demonstrated. 2-4) One of the challenging issues for producing such devices at low cost is the control of conductivity type and conductivity at designated segments using an ion-implantation (I/I) technique. Especially, p-type doping by Mg-I/I has been difficult 5-8) because donor-type defects introduced by I/I and/or donor impurities such as O or Si diffused from the protective overlayer during post-implantation annealing (PIA) 7) likely compensate holes.

Original languageEnglish
Title of host publication19th International Workshop on Junction Technology, IWJT 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863487277
DOIs
Publication statusPublished - 2019 Jun
Event19th International Workshop on Junction Technology, IWJT 2019 - Kyoto, Japan
Duration: 2019 Jun 62019 Jun 7

Publication series

Name19th International Workshop on Junction Technology, IWJT 2019

Conference

Conference19th International Workshop on Junction Technology, IWJT 2019
CountryJapan
CityKyoto
Period19/6/619/6/7

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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