Photoluminescence of ytterbium-doped porous silicon

T. Kimura, A. Yokoi, Y. Nishida, Riichiro Saito, S. Yugo, T. Ikoma

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Abstract

Yb3+-related photoluminescence is observed at room temperature from Yb-doped porous silicon layers prepared by the electro-chemical method developed by our group for Er doping of porous silicon layers. After rapid thermal annealing in a pure argon atmosphere at high temperatures (above ∼ 900°C), samples show a sharp photoluminescence band at around 1.0 μm which is assigned to the intrashell 4f-4f transitions 2F 5/22F7/2 of Yb3+. The enlarged energy bandgap of silicon as a result of anodization makes possible the excitation of Yb3+ 4f-electrons with the recombination energy of photocarriers generated in the host porous silicon layers.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
Publication statusPublished - 1995 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Kimura, T., Yokoi, A., Nishida, Y., Saito, R., Yugo, S., & Ikoma, T. (1995). Photoluminescence of ytterbium-doped porous silicon. Applied Physics Letters, 67.