Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

N. Yoshimoto, T. Matsuoka, T. Sasaki, A. Katsui

Research output: Contribution to journalArticle

213 Citations (Scopus)

Abstract

InGaN single-crystal films were grown on (0001) plane sapphire substrates at 800 °C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near-band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near-band edge emission on the indium mole fraction of InGaN has been investigated.

Original languageEnglish
Pages (from-to)2251-2253
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number18
DOIs
Publication statusPublished - 1991 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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