TY - GEN
T1 - Photoluminescence of InGaAs islands on Si (111) substrate grown using micro-channel selective-area MOVPE
AU - Fujimoto, Y.
AU - Higo, A.
AU - Kjellman, J. O.
AU - Watanabe, S.
AU - Sugiyama, M.
AU - Nakano, Y.
PY - 2012
Y1 - 2012
N2 - III-V hetero-integration on silicon is most attractive for lasers, SOAs, and detectors for silicon photonics. InGaAs disks on Si substrate have been grown using micro-channel selective-area metal-organic vapor phase epitaxy. We have measured the luminescent spectra by using the micro-photoluminescence systems and obtained broadband spectra in 1.3-2.1 μm range, suitable for the telecom and the data-communication wavelength.
AB - III-V hetero-integration on silicon is most attractive for lasers, SOAs, and detectors for silicon photonics. InGaAs disks on Si substrate have been grown using micro-channel selective-area metal-organic vapor phase epitaxy. We have measured the luminescent spectra by using the micro-photoluminescence systems and obtained broadband spectra in 1.3-2.1 μm range, suitable for the telecom and the data-communication wavelength.
UR - http://www.scopus.com/inward/record.url?scp=84869167315&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869167315&partnerID=8YFLogxK
U2 - 10.1109/OMEMS.2012.6318872
DO - 10.1109/OMEMS.2012.6318872
M3 - Conference contribution
AN - SCOPUS:84869167315
SN - 9781457715112
T3 - International Conference on Optical MEMS and Nanophotonics
SP - 200
EP - 201
BT - 2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
T2 - 2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
Y2 - 6 August 2012 through 9 August 2012
ER -