Photoluminescence of InGaAs islands on Si (111) substrate grown using micro-channel selective-area MOVPE

Y. Fujimoto, Akio Higo, J. O. Kjellman, S. Watanabe, M. Sugiyama, Y. Nakano

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    3 Citations (Scopus)

    Abstract

    III-V hetero-integration on silicon is most attractive for lasers, SOAs, and detectors for silicon photonics. InGaAs disks on Si substrate have been grown using micro-channel selective-area metal-organic vapor phase epitaxy. We have measured the luminescent spectra by using the micro-photoluminescence systems and obtained broadband spectra in 1.3-2.1 μm range, suitable for the telecom and the data-communication wavelength.

    Original languageEnglish
    Title of host publication2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
    Pages200-201
    Number of pages2
    DOIs
    Publication statusPublished - 2012 Nov 22
    Event2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012 - Banff, AB, Canada
    Duration: 2012 Aug 6 → 2012 Aug 9

    Publication series

    NameInternational Conference on Optical MEMS and Nanophotonics
    ISSN (Print)2160-5033
    ISSN (Electronic)2160-5041

    Other

    Other2012 International Conference on Optical MEMS and Nanophotonics, OMN 2012
    CountryCanada
    CityBanff, AB
    Period12/8/6 → 12/8/9

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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