Photoluminescence of high-density and sub-20-nm GaAs nanodisks fabricated with a neutral beam etching process and MOVPE regrowth for high performance QDs devices

Yosuke Tamura, Akio Higo, Takayuki Kiba, Wang Yunpeng, Makoto Igarashi, Cedric Thomas, Weiguo Hu, Mohd Erman Fauzi, Akihiro Murayama, Masakazu Sugiyama, Yoshiaki Nakano, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

III-V compound semiconductor quantum dots photonic devices are very attractive because of their low power consumption, temperature stability, and high-speed modulation. We studied and developed a defect-free top-down fabrication process for sub-20-nm GaAs nanodisks (NDs) that uses bio-template and neutral beam etching. We successfully fabricated 100-nm-high nanopillars embedding 4- and 8-nm-thick GaAs quantum well and 30-nm-thick Al 0.3Ga0.7As barrier-stacked structures. The nanopillars were mounted by metalorganic vapor phase epitaxy. We measured visible light photoluminescence at a low temperature originating from the GaAs NDs. Nanodisks fabricated by the top-down process have a great potential for use in high-performance III-V photonic devices.

Original languageEnglish
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages872-875
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 2013 Aug 52013 Aug 8

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period13/8/513/8/8

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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  • Cite this

    Tamura, Y., Higo, A., Kiba, T., Yunpeng, W., Igarashi, M., Thomas, C., Hu, W., Fauzi, M. E., Murayama, A., Sugiyama, M., Nakano, Y., & Samukawa, S. (2013). Photoluminescence of high-density and sub-20-nm GaAs nanodisks fabricated with a neutral beam etching process and MOVPE regrowth for high performance QDs devices. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 872-875). [6720889] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6720889