Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth

Hirotake Itoh; Masahiro Yoshita; Hidefumi Akiyama; Dhanorm Plumwongrot; Takeo Maruyama; Shigehisa Arai

Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth

Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Dhanorm Plumwongrot, Takeo Maruyama, Shigehisa Arai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2007
Publisher	Optical Society of America
ISBN (Print)	1557528349, 9781557528346
Publication status	Published - 2007 Jan 1
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States Duration: 2007 May 6 → 2007 May 6

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2007
Country	United States
City	Baltimore, MD
Period	07/5/6 → 07/5/6

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

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Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth. / Itoh, Hirotake; Yoshita, Masahiro; Akiyama, Hidefumi; Plumwongrot, Dhanorm; Maruyama, Takeo; Arai, Shigehisa.

Conference on Lasers and Electro-Optics, CLEO 2007. Optical Society of America, 2007. (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Itoh, H, Yoshita, M, Akiyama, H, Plumwongrot, D, Maruyama, T & Arai, S 2007, Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth. in Conference on Lasers and Electro-Optics, CLEO 2007. Optics InfoBase Conference Papers, Optical Society of America, Conference on Lasers and Electro-Optics, CLEO 2007, Baltimore, MD, United States, 07/5/6.

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abstract = "We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.",

author = "Hirotake Itoh and Masahiro Yoshita and Hidefumi Akiyama and Dhanorm Plumwongrot and Takeo Maruyama and Shigehisa Arai",

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AU - Plumwongrot, Dhanorm

AU - Maruyama, Takeo

AU - Arai, Shigehisa

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