TY - GEN
T1 - Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth
AU - Itoh, Hirotake
AU - Yoshita, Masahiro
AU - Akiyama, Hidefumi
AU - Plumwongrot, Dhanorm
AU - Maruyama, Takeo
AU - Arai, Shigehisa
PY - 2007/1/1
Y1 - 2007/1/1
N2 - We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.
AB - We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.
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M3 - Conference contribution
AN - SCOPUS:84898935663
SN - 1557528349
SN - 9781557528346
T3 - Optics InfoBase Conference Papers
BT - Conference on Lasers and Electro-Optics, CLEO 2007
PB - Optical Society of America
T2 - Conference on Lasers and Electro-Optics, CLEO 2007
Y2 - 6 May 2007 through 6 May 2007
ER -