Abstract
We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics, 2007, CLEO 2007 |
DOIs | |
Publication status | Published - 2007 Dec 1 |
Externally published | Yes |
Event | Conference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States Duration: 2007 May 6 → 2007 May 11 |
Other
Other | Conference on Lasers and Electro-Optics, 2007, CLEO 2007 |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 07/5/6 → 07/5/11 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials