Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth

Hirotake Itoh; Masahiro Yoshita; Hidefumi Akiyama; Dhanorm Plumwongrot; Takeo Maruyama; Shigehisa Arai

doi:10.1109/CLEO.2007.4452751

Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth

Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Dhanorm Plumwongrot, Takeo Maruyama, Shigehisa Arai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs	https://doi.org/10.1109/CLEO.2007.4452751
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States Duration: 2007 May 6 → 2007 May 11

Other

Other	Conference on Lasers and Electro-Optics, 2007, CLEO 2007
Country/Territory	United States
City	Baltimore, MD
Period	07/5/6 → 07/5/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1109/CLEO.2007.4452751

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Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth. / Itoh, Hirotake; Yoshita, Masahiro; Akiyama, Hidefumi; Plumwongrot, Dhanorm; Maruyama, Takeo; Arai, Shigehisa.

Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007. 4452751.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Itoh, H, Yoshita, M, Akiyama, H, Plumwongrot, D, Maruyama, T & Arai, S 2007, Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth. in Conference on Lasers and Electro-Optics, 2007, CLEO 2007., 4452751, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Baltimore, MD, United States, 07/5/6. https://doi.org/10.1109/CLEO.2007.4452751

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title = "Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth",

abstract = "We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.",

author = "Hirotake Itoh and Masahiro Yoshita and Hidefumi Akiyama and Dhanorm Plumwongrot and Takeo Maruyama and Shigehisa Arai",

year = "2007",

month = dec,

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doi = "10.1109/CLEO.2007.4452751",

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AU - Itoh, Hirotake

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Plumwongrot, Dhanorm

AU - Maruyama, Takeo

AU - Arai, Shigehisa

PY - 2007/12/1

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BT - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

T2 - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Y2 - 6 May 2007 through 11 May 2007

ER -

Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth

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