Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth

Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Dhanorm Plumwongrot, Takeo Maruyama, Shigehisa Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We measured photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: 2007 May 62007 May 11

Other

OtherConference on Lasers and Electro-Optics, 2007, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period07/5/607/5/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Photoluminescence of GaInAsP/InP single quantumwires with lateralwidths down to 6 nm fabricated by dry etching and regrowth'. Together they form a unique fingerprint.

Cite this