Photoluminescence of erbium-diffused silicon

H. Horiguchi, T. Kinone, R. Saito, T. Kimura, T. Ikoma

Research output: Contribution to journalConference article

Abstract

Erbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+O2 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μm. The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤0.5 nm at 20 K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

Original languageEnglish
Pages (from-to)81-86
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume422
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Photoluminescence of erbium-diffused silicon'. Together they form a unique fingerprint.

  • Cite this