Photoluminescence of dislocations in plastically deformed GaN

I. Yonenaga, S. Itoh, H. Makino, T. Goto, T. Yao

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Fresh (a/3)[1120] dislocations on the (1100) prismatic plane were introduced into GaN bulk crystals by plastic deformation at 950 °C. Photoluminescence (PL) studies at 11 K showed that the near band edge (3.48 eV) luminescence intensity decreased drastically in the deformed GaN, attributed to the introduction of a high-density of non-radiative recombination centers during plastic deformation. The yellow band (2.22 eV) luminescence decreased by plastic deformation, while several luminescence bands centered at 1.79, 1.92, 2.4 and 2.8 eV developed. The dependence of PL features on deformation and annealing indicates that yellow luminescence is not related to the native structure of dislocations in GaN.

Original languageEnglish
Pages (from-to)455-459
Number of pages5
JournalPhysica B: Condensed Matter
Issue number1
Publication statusPublished - 2006 Apr 1
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29


  • Dislocation structure
  • Dislocations
  • Nitrides
  • Photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Photoluminescence of dislocations in plastically deformed GaN'. Together they form a unique fingerprint.

Cite this