Abstract
Fresh (a/3)[1120] dislocations on the (1100) prismatic plane were introduced into GaN bulk crystals by plastic deformation at 950 °C. Photoluminescence (PL) studies at 11 K showed that the near band edge (3.48 eV) luminescence intensity decreased drastically in the deformed GaN, attributed to the introduction of a high-density of non-radiative recombination centers during plastic deformation. The yellow band (2.22 eV) luminescence decreased by plastic deformation, while several luminescence bands centered at 1.79, 1.92, 2.4 and 2.8 eV developed. The dependence of PL features on deformation and annealing indicates that yellow luminescence is not related to the native structure of dislocations in GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 455-459 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 376-377 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Apr 1 |
| Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29 |
Keywords
- Dislocation structure
- Dislocations
- Nitrides
- Photoluminescence
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Yonenaga, I., Itoh, S., Makino, H., Goto, T., & Yao, T. (2006). Photoluminescence of dislocations in plastically deformed GaN. Physica B: Condensed Matter, 376-377(1), 455-459. https://doi.org/10.1016/j.physb.2005.12.117