Photoluminescence of dislocations in plastically deformed GaN

I. Yonenaga; S. Itoh; H. Makino; T. Goto; T. Yao

doi:10.1016/j.physb.2005.12.117

Photoluminescence of dislocations in plastically deformed GaN

I. Yonenaga, S. Itoh, H. Makino, T. Goto, T. Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Fresh (a/3)[1120] dislocations on the (1100) prismatic plane were introduced into GaN bulk crystals by plastic deformation at 950 °C. Photoluminescence (PL) studies at 11 K showed that the near band edge (3.48 eV) luminescence intensity decreased drastically in the deformed GaN, attributed to the introduction of a high-density of non-radiative recombination centers during plastic deformation. The yellow band (2.22 eV) luminescence decreased by plastic deformation, while several luminescence bands centered at 1.79, 1.92, 2.4 and 2.8 eV developed. The dependence of PL features on deformation and annealing indicates that yellow luminescence is not related to the native structure of dislocations in GaN.

Original language	English
Pages (from-to)	455-459
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.117
Publication status	Published - 2006 Apr 1
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29

Keywords

Dislocation structure
Dislocations
Nitrides
Photoluminescence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Photoluminescence of dislocations in plastically deformed GaN",

abstract = "Fresh (a/3)[1120] dislocations on the (1100) prismatic plane were introduced into GaN bulk crystals by plastic deformation at 950 °C. Photoluminescence (PL) studies at 11 K showed that the near band edge (3.48 eV) luminescence intensity decreased drastically in the deformed GaN, attributed to the introduction of a high-density of non-radiative recombination centers during plastic deformation. The yellow band (2.22 eV) luminescence decreased by plastic deformation, while several luminescence bands centered at 1.79, 1.92, 2.4 and 2.8 eV developed. The dependence of PL features on deformation and annealing indicates that yellow luminescence is not related to the native structure of dislocations in GaN.",

keywords = "Dislocation structure, Dislocations, Nitrides, Photoluminescence",

author = "I. Yonenaga and S. Itoh and H. Makino and T. Goto and T. Yao",

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T1 - Photoluminescence of dislocations in plastically deformed GaN

AU - Yonenaga, I.

AU - Itoh, S.

AU - Makino, H.

AU - Goto, T.

AU - Yao, T.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Fresh (a/3)[1120] dislocations on the (1100) prismatic plane were introduced into GaN bulk crystals by plastic deformation at 950 °C. Photoluminescence (PL) studies at 11 K showed that the near band edge (3.48 eV) luminescence intensity decreased drastically in the deformed GaN, attributed to the introduction of a high-density of non-radiative recombination centers during plastic deformation. The yellow band (2.22 eV) luminescence decreased by plastic deformation, while several luminescence bands centered at 1.79, 1.92, 2.4 and 2.8 eV developed. The dependence of PL features on deformation and annealing indicates that yellow luminescence is not related to the native structure of dislocations in GaN.

AB - Fresh (a/3)[1120] dislocations on the (1100) prismatic plane were introduced into GaN bulk crystals by plastic deformation at 950 °C. Photoluminescence (PL) studies at 11 K showed that the near band edge (3.48 eV) luminescence intensity decreased drastically in the deformed GaN, attributed to the introduction of a high-density of non-radiative recombination centers during plastic deformation. The yellow band (2.22 eV) luminescence decreased by plastic deformation, while several luminescence bands centered at 1.79, 1.92, 2.4 and 2.8 eV developed. The dependence of PL features on deformation and annealing indicates that yellow luminescence is not related to the native structure of dislocations in GaN.

KW - Dislocation structure

KW - Dislocations

KW - Nitrides

KW - Photoluminescence

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DO - 10.1016/j.physb.2005.12.117

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VL - 376-377

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EP - 459

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Photoluminescence of dislocations in plastically deformed GaN

Abstract

Keywords

ASJC Scopus subject areas

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