Photoluminescence of CuInS2-based semiconductor quantum dots; Its origin and the effect of ZnS coating

Katsuhiro Nose, Naoya Fujita, Takahisa Omata, Shinya Otsuka-Yao-Matsuo, Wataru Kato, Masato Uehara, Hiroyuki Nakamura, Hideaki Maeda, Hayato Kamioka, Hideo Hosono

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


The origin of the size-dependent photoluminescence (PL) of CuInS2-ZnS alloyed quantum dots and the effect of a ZnS thin layer coating on PL properties were studied. The PL emission band shifted to the shorter wavelength region with a decrease in the crystal size. A time-resolved measurement indicated that the PL lifetime for the lower energy component of the emission band was longer than that of the higher energy component. Although this is a characteristic feature of the donor-acceptor pair (DAP) recombination, the size dependent shift of the band was too large to be attributed to DAP recombination. The emission was attributed to an electronic transition from the quantum confined conduction band to an acceptor level. By coating with a ZnS thin layer the PL quantum yield increased up to 31%.

Original languageEnglish
Article number012028
JournalJournal of Physics: Conference Series
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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