Photoluminescence of Bi3+ in Y3Ga5O 12 single-crystal host

M. Nikl, A. Novoselov, E. Mihoková, K. Polák, M. Dusek, B. McClune, A. Yoshikawa, T. Fukuda

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52 Citations (Scopus)

Abstract

Photoluminescence spectra and decay kinetics within 10-350 K were measured in the Bi-doped Y3Ga5O12 single crystal prepared by the micro-pulling-down technique. Temperature dependences of the decay times and the integrated emission intensities obtained from the experiment were simulated using a phenomenological two-excited-state-level model. The model provided quantitative parameters of the involved excited state levels of the Bi3+ luminescence centre in this host. The results are discussed in the light of already published data obtained for other Bi-doped compounds. The influence of the defects and structural irregularities of the host on the Bi3+ emission characteristics is discussed as well.

Original languageEnglish
Pages (from-to)3367-3375
Number of pages9
JournalJournal of Physics Condensed Matter
Volume17
Issue number21
DOIs
Publication statusPublished - 2005 Jun 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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