TY - JOUR
T1 - Photoluminescence and Raman spectral study of porous Si during F2 exposure
AU - Wadayama, Toshimasa
AU - Arigane, Tsuyoshi
AU - Hujine, Katsuhiko
AU - Hatta, Aritada
PY - 1997
Y1 - 1997
N2 - Visible luminescence and Raman spectral changes of porous Si (PS) during F2 exposure were recorded. F2 exposure of the PS under Ar+ laser light (488 nm) irradiation at 373 K leads to a significant spectral change of photoluminescence (PL). During an early stage of the exposure, the PL band of the 750 nm peak decreased in intensity and a new band emerged at 600 nm. After 30 min, the new band dominated the spectrum while the band at 750 nm almost disappeared. On the contrary, the phonon band due to nanosize Si crystals of the PS remained unchanged. These results suggest that the PL spectral change arises due to a change in the chemical structure of the sample surface.
AB - Visible luminescence and Raman spectral changes of porous Si (PS) during F2 exposure were recorded. F2 exposure of the PS under Ar+ laser light (488 nm) irradiation at 373 K leads to a significant spectral change of photoluminescence (PL). During an early stage of the exposure, the PL band of the 750 nm peak decreased in intensity and a new band emerged at 600 nm. After 30 min, the new band dominated the spectrum while the band at 750 nm almost disappeared. On the contrary, the phonon band due to nanosize Si crystals of the PS remained unchanged. These results suggest that the PL spectral change arises due to a change in the chemical structure of the sample surface.
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U2 - 10.1143/jjap.36.l313
DO - 10.1143/jjap.36.l313
M3 - Article
AN - SCOPUS:0031102275
SN - 0021-4922
VL - 36
SP - L313-L315
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 3 B
ER -