TY - JOUR
T1 - Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE
AU - Kaewket, Dares
AU - Tungasmita, Sukkaneste
AU - Sanorpim, Sakuntam
AU - Nakajima, Fumihiro
AU - Nakadan, Nobuhiro
AU - Kimura, Tokuharu
AU - Katayama, Ryuji
AU - Onabe, Kentaro
N1 - Funding Information:
The authors express special thanks to Y. Shiraki for providing research facilities at Research Center for Advanced Science and Technology (RCAST), The University of Tokyo. The authors would like to acknowledge S. Koh and S. Ohtake for their technical support. This work has been supported by Thailand-Japan Technology Transfer Project-Overseas Economic Cooperation Fund (TJTTP-OECF), the Grant for Development of New Faculty Staff (at Chulalongkorn University) and Graduate school, Department of Physics, Faculty of Science, Chulalongkorn University.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/1
Y1 - 2007/1
N2 - In0.056 Ga0.944 P0.975 N0.025 / GaP lattice-matched single quantum wells (SQWs) have been grown on GaP (0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE). Low-temperature (10 K) photoluminescence (PL) and PL excitation (PLE) measurements for the varied well widths (LZ = 1.6, 2.4, 3.2 and 6.4 nm) have been revealed to confirm the quantum confinement by the well. Comparing with the bulk layer, the PL peak position blue shift amounts to 76 meV for the narrowest well of LZ = 1.6 nm. On the other hand, the PLE spectra have shown the blue shift of the fundamental absorption edge to 2.17 eV for LZ = 1.6 nm from 2.06 eV for the bulk. The blue shift is about 110 meV. In these samples, the PL and PLE blue shifts are believed to be predominantly determined by the quantum confinement effect to the well. Further results show a high-temperature PL has been far more enhanced than in the bulk due to the large conduction band offset Δ Ec.
AB - In0.056 Ga0.944 P0.975 N0.025 / GaP lattice-matched single quantum wells (SQWs) have been grown on GaP (0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE). Low-temperature (10 K) photoluminescence (PL) and PL excitation (PLE) measurements for the varied well widths (LZ = 1.6, 2.4, 3.2 and 6.4 nm) have been revealed to confirm the quantum confinement by the well. Comparing with the bulk layer, the PL peak position blue shift amounts to 76 meV for the narrowest well of LZ = 1.6 nm. On the other hand, the PLE spectra have shown the blue shift of the fundamental absorption edge to 2.17 eV for LZ = 1.6 nm from 2.06 eV for the bulk. The blue shift is about 110 meV. In these samples, the PL and PLE blue shifts are believed to be predominantly determined by the quantum confinement effect to the well. Further results show a high-temperature PL has been far more enhanced than in the bulk due to the large conduction band offset Δ Ec.
KW - A1. Photoluminescence (PL)
KW - A1. Photoluminescence excitation (PLE)
KW - A3. MOVPE
KW - A3. Single quantum wells
KW - B1. III-P-nitrides
KW - B2. InGaPN alloy
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U2 - 10.1016/j.jcrysgro.2006.10.221
DO - 10.1016/j.jcrysgro.2006.10.221
M3 - Article
AN - SCOPUS:33846494283
VL - 298
SP - 531
EP - 535
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS
ER -