Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN

Kazunobu Kojima, Masaya Ueda, Mitsuru Funato, Yoichi Kawakami

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Optical properties of semipolar and nonpolar unstrained GaN are studied employing photoluminescence, optical reflectance and the k·p perturbation theory in this article. We find that donor bound and free A excitons show a strong polarization for photoluminescence in {112̄2} and {101̄0} GaN, while that of B excitons has only a little dependence on crystal orientations. Optical reflectance measurements are also performed to investigate resonance energies and transition probabilities of free excitons. The oscillator strength of A and C excitons has a strong dependency on the angle between c-axis and growth direction, while that of B is nearly unchanged in every unstrained GaN plane. The experimental results can be well explained by our k·p calculations.

Original languageEnglish
Pages (from-to)1853-1856
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN'. Together they form a unique fingerprint.

  • Cite this