Photolithographic properties of ultrathin polymer Langmuir-Blodgett films containing anthracene moieties

Tiesheng Li; Jinfeng Chen; Masaya Mitsuishi; Tokuji Miyashita

doi:10.1039/b300686g

Photolithographic properties of ultrathin polymer Langmuir-Blodgett films containing anthracene moieties

Tiesheng Li, Jinfeng Chen, Masaya Mitsuishi, Tokuji Miyashita

Polymer Hybrid Materials Research Center

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

This study investigated the unique photolithographic properties of poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA)) ultrathin films prepared by the Langmuir-Blodgett (LB) technique. The copolymer forms a stable monolayer on a water surface and LB films with any desired number of layers. The nPMA group in the LB film acts as a photodecomposition group under irradiation at 254 nm. On the other hand, photodimerization occurred between anthracene groups under irradiation at 365 nm. Consequently, positive-tone and negative-tone patterns were printed on a silicon wafer by choosing a suitable irradiation light wavelength. Etching resistance of p(nPMA-AMMA) LB films was also investigated in a nanometer regime permitting etching of gold or copper films.

Original language	English
Pages (from-to)	1565-1569
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	13
Issue number	7
DOIs	https://doi.org/10.1039/b300686g
Publication status	Published - 2003 Jul 1

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

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@article{99f37266e22a46dfa8573380c56a1836,

title = "Photolithographic properties of ultrathin polymer Langmuir-Blodgett films containing anthracene moieties",

abstract = "This study investigated the unique photolithographic properties of poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA)) ultrathin films prepared by the Langmuir-Blodgett (LB) technique. The copolymer forms a stable monolayer on a water surface and LB films with any desired number of layers. The nPMA group in the LB film acts as a photodecomposition group under irradiation at 254 nm. On the other hand, photodimerization occurred between anthracene groups under irradiation at 365 nm. Consequently, positive-tone and negative-tone patterns were printed on a silicon wafer by choosing a suitable irradiation light wavelength. Etching resistance of p(nPMA-AMMA) LB films was also investigated in a nanometer regime permitting etching of gold or copper films.",

author = "Tiesheng Li and Jinfeng Chen and Masaya Mitsuishi and Tokuji Miyashita",

year = "2003",

month = jul,

day = "1",

doi = "10.1039/b300686g",

language = "English",

volume = "13",

pages = "1565--1569",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "7",

}

TY - JOUR

T1 - Photolithographic properties of ultrathin polymer Langmuir-Blodgett films containing anthracene moieties

AU - Li, Tiesheng

AU - Chen, Jinfeng

AU - Mitsuishi, Masaya

AU - Miyashita, Tokuji

PY - 2003/7/1

Y1 - 2003/7/1

N2 - This study investigated the unique photolithographic properties of poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA)) ultrathin films prepared by the Langmuir-Blodgett (LB) technique. The copolymer forms a stable monolayer on a water surface and LB films with any desired number of layers. The nPMA group in the LB film acts as a photodecomposition group under irradiation at 254 nm. On the other hand, photodimerization occurred between anthracene groups under irradiation at 365 nm. Consequently, positive-tone and negative-tone patterns were printed on a silicon wafer by choosing a suitable irradiation light wavelength. Etching resistance of p(nPMA-AMMA) LB films was also investigated in a nanometer regime permitting etching of gold or copper films.

AB - This study investigated the unique photolithographic properties of poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA)) ultrathin films prepared by the Langmuir-Blodgett (LB) technique. The copolymer forms a stable monolayer on a water surface and LB films with any desired number of layers. The nPMA group in the LB film acts as a photodecomposition group under irradiation at 254 nm. On the other hand, photodimerization occurred between anthracene groups under irradiation at 365 nm. Consequently, positive-tone and negative-tone patterns were printed on a silicon wafer by choosing a suitable irradiation light wavelength. Etching resistance of p(nPMA-AMMA) LB films was also investigated in a nanometer regime permitting etching of gold or copper films.

UR - http://www.scopus.com/inward/record.url?scp=0038641283&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038641283&partnerID=8YFLogxK

U2 - 10.1039/b300686g

DO - 10.1039/b300686g

M3 - Article

AN - SCOPUS:0038641283

VL - 13

SP - 1565

EP - 1569

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

SN - 0959-9428

IS - 7

ER -