Photoisomerization-induced manipulation of single-electron tunneling for novel Si-based optical memory

Ryoma Hayakawa, Kenji Higashiguchi, Kenji Matsuda, Toyohiro Chikyow, Yutaka Wakayama

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We demonstrated optical manipulation of single-electron tunneling (SET) by photoisomerization of diarylethene molecules in a metal-insulator-semiconductor (MIS) structure. Stress is placed on the fact that device operation is realized in the practical device configuration of MIS structure and that it is not achieved in structures based on nanogap electrodes and scanning probe techniques. Namely, this is a basic memory device configuration that has the potential for large-scale integration. In our device, the threshold voltage of SET was clearly modulated as a reversible change in the molecular orbital induced by photoisomerization, indicating that diarylethene molecules worked as optically controllable quantum dots. These findings will allow the integration of photonic functionality into current Si-based memory devices, which is a unique feature of organic molecules that is unobtainable with inorganic materials. Our proposed device therefore has enormous potential for providing a breakthrough in Si technology.

Original languageEnglish
Pages (from-to)11371-11376
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number21
Publication statusPublished - 2013 Nov 13
Externally publishedYes


  • metal-insulator-semiconductor
  • optical manipulation
  • photochromic quantum dot
  • single-electron tunneling

ASJC Scopus subject areas

  • Materials Science(all)


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