Photoinduced stress in a ZnSeGaAs epilayer containing 90°α partial dislocations

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Abstract

Photoinduced stress in a ZnSeGaAs epilayer containing 90°α partial dislocations was observed in situ by means of polarized cathodoluminescence spectroscopy under light illumination in a transmission electron microscope. A dislocation glided under the illumination of a monochromatic light whose photon energy was above 2.07-2.40 eV, presumably due to a recombination-enhanced effect. The glide accompanied with a variation of the compression stress along [110] in the epilayer; the stress decreased at the temperature of 35 K, while it increased at higher temperatures.

Original languageEnglish
Article number181909
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number18
DOIs
Publication statusPublished - 2005 Oct 31

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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