Photoinduced stress in a ZnSeGaAs epilayer containing 90°α partial dislocations was observed in situ by means of polarized cathodoluminescence spectroscopy under light illumination in a transmission electron microscope. A dislocation glided under the illumination of a monochromatic light whose photon energy was above 2.07-2.40 eV, presumably due to a recombination-enhanced effect. The glide accompanied with a variation of the compression stress along  in the epilayer; the stress decreased at the temperature of 35 K, while it increased at higher temperatures.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)