Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry

Satoshi Ogawa; Tatsuo Nauo; Yasuo Ktmura; Hisao Ishii; Michio Niwano

doi:10.1143/JJAP.45.530

Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry

Satoshi Ogawa, Tatsuo Nauo, Yasuo Ktmura, Hisao Ishii, Michio Niwano

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

In order to investigate a doping mechanism in organic semiconductors, we have studied the influence of oxygen exposure on pentacene and poly(3-hexylthiophene) (P3HT) field effect transistor (FET) using displacement current measurement (DCM). The DCM results revealed that the oxygen doping effect is small in the dark condition, but is much enhanced by light illumination (photoinduced doping). From the result of infrared reflection absorption in the multiple internal reflection geometry (MIR-IRAS) for P3HT film, we conclude that the charge-transfer reaction between P3HT molecule and O₂ molecules is accelerated by the light illumination.

Original language	English
Pages (from-to)	530-533
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	1 B
DOIs	https://doi.org/10.1143/JJAP.45.530
Publication status	Published - 2006 Jan 20
Externally published	Yes

Keywords

Field-effect transistors
Organic semiconductors
Pentacene
Photoinduced doping
Poly(3-hexylthiophene)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.530

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Ogawa, S., Nauo, T., Ktmura, Y., Ishii, H., & Niwano, M. (2006). Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(1 B), 530-533. https://doi.org/10.1143/JJAP.45.530

Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry. / Ogawa, Satoshi; Nauo, Tatsuo; Ktmura, Yasuo et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 1 B, 20.01.2006, p. 530-533.

Research output: Contribution to journal › Article › peer-review

Ogawa, S, Nauo, T, Ktmura, Y, Ishii, H & Niwano, M 2006, 'Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 1 B, pp. 530-533. https://doi.org/10.1143/JJAP.45.530

Ogawa S, Nauo T, Ktmura Y, Ishii H, Niwano M. Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 Jan 20;45(1 B):530-533. https://doi.org/10.1143/JJAP.45.530

Ogawa, Satoshi ; Nauo, Tatsuo ; Ktmura, Yasuo et al. / Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 1 B. pp. 530-533.

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Photoinduced doping of organic field effect transistors studied by displacement current measurement and infrared absorption spectroscopy in multiple internal reflection geometry

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