Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, T. Sukegawa, G. L. Liu, Z. Liu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.

Original languageEnglish
Article number162902
JournalApplied Physics Letters
Volume96
Issue number16
DOIs
Publication statusPublished - 2010 Apr 19
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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