Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

T. Tanimura; S. Toyoda; H. Kamada; H. Kumigashira; M. Oshima; T. Sukegawa; G. L. Liu; Z. Liu

doi:10.1063/1.3409162

Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, T. Sukegawa, G. L. Liu, Z. Liu

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.

Original language	English
Article number	162902
Journal	Applied Physics Letters
Volume	96
Issue number	16
DOIs	https://doi.org/10.1063/1.3409162
Publication status	Published - 2010 Apr 19
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3409162

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title = "Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy",

abstract = "We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.",

author = "T. Tanimura and S. Toyoda and H. Kamada and H. Kumigashira and M. Oshima and T. Sukegawa and Liu, {G. L.} and Z. Liu",

note = "Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc., (Selete) for providing the high- k gate dielectric samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC). The synchrotron-radiation photoemission measurements were performed under the project 08S2-003 at the Institute of Materials Structure Science at KEK. ",

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doi = "10.1063/1.3409162",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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T1 - Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

AU - Tanimura, T.

AU - Toyoda, S.

AU - Kamada, H.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Sukegawa, T.

AU - Liu, G. L.

AU - Liu, Z.

N1 - Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc., (Selete) for providing the high- k gate dielectric samples. This work was supported by the Semiconductor Technology Academic Research Center (STARC). The synchrotron-radiation photoemission measurements were performed under the project 08S2-003 at the Institute of Materials Structure Science at KEK.

PY - 2010/4/19

Y1 - 2010/4/19

N2 - We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.

AB - We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.

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Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

Abstract

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