Abstract
We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.
Original language | English |
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Article number | 162902 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2010 Apr 19 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)