Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

T. Tanimura; S. Toyoda; H. Kamada; H. Kumigashira; M. Oshima; T. Sukegawa; G. L. Liu; Z. Liu

doi:10.1063/1.3409162

Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, T. Sukegawa, G. L. Liu, Z. Liu

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We have demonstrated photoinduced charge-trapping phenomena in metal/high- k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.

Original language	English
Article number	162902
Journal	Applied Physics Letters
Volume	96
Issue number	16
DOIs	https://doi.org/10.1063/1.3409162
Publication status	Published - 2010 Apr 19
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3409162

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Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy. / Tanimura, T.; Toyoda, S.; Kamada, H.; Kumigashira, H.; Oshima, M.; Sukegawa, T.; Liu, G. L.; Liu, Z.

In: Applied Physics Letters, Vol. 96, No. 16, 162902, 19.04.2010.

Research output: Contribution to journal › Article › peer-review

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AU - Liu, G. L.

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